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Measurement of the Bending Strength of Vapor−Liquid−Solid Grown Silicon Nanowires
Auteur(s)
Hoffmann, Samuel
Utke, Ivo
Moser, Benedikt
Michler, Johann
Christiansen, Silke H.
Schmidt, Volker
Senz, Stephan
Werner, Peter
Gösele, Ulrich
Ballif, Christophe
Date Issued
2006
Journal
Nano Letters, American Chemical Society (ACS), 2006/6/4/622–625
Abstract
The fracture strength of silicon nanowires grown on a [111] silicon substrate by the vapor−liquid−solid process was measured. The nanowires, with diameters between 100 and 200 nm and a typical length of 2 μm, were subjected to bending tests using an atomic force microscopy setup inside a scanning electron microscope. The average strength calculated from the maximum nanowire deflection before fracture was around 12 GPa, which is 6% of the Young's modulus of silicon along the nanowire direction. This value is close to the theoretical fracture strength, which indicates that surface or volume defects, if present, play only a minor role in fracture initiation.
Identifiers
Publication type
journal article
