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Hot Electrons in Amorphous Silicon
Auteur(s)
Juška, G.
Editeur(s)
Arlauska, K.
Kočka, J.
Hoheisel, M.
Chabloz, P.
Date de parution
1995
In
Physical Review Letters, American Physical Society (APS), 1995/75/16/2984-2987
Résumé
At extremely high electric fields (<i>F</i>≤0.55 MV/cm) and high temperatures (300<<i>T</i><450 K), full deactivation of the electron drift mobility in amorphous hydrogenated silicon (<i>a</i>-Si:H) is obtained and therefore the shallow trapping is substantially reduced. New data clearly demonstrate that the free electron (band) mobility in <i>a</i>-Si:H decreases when the electric field increases, contrary to other disordered materials (e.g., amorphous selenium). In this sense the free carrier transport in <i>a</i>-Si:H is similar to the hot carriers in crystals when phonon scattering prevails.
Autre version
http://dx.doi.org/10.1103/PhysRevLett.75.2984
Type de publication
Resource Types::text::journal::journal article
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