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<i>L</i><sub>2</sub>,<i>3</i> edge of silicon: Theory and experiment
Auteur(s)
Aebi, Philipp
Editeur(s)
Keller, J.
Erbudak, M.
Vanini, F.
Date de parution
1988
In
Physical Review B, American Physical Society (APS), 1988/38/8/5392-5396
Résumé
Structures in the electron-energy-loss spectrum up to 30 eV above the <i>L</i><sub>2</sub>,<i>3</i> edge of clean silicon, excited with high- and low-energy electrons, are found to be in good agreement with a multiple-scattering calculation of the empty density of states of a tetrahedral cluster of 17 silicon atoms. The relaxation of the excited atom is investigated by means of the emission spectrum. The decay channels involving electrons in resonant scattering states produce high-energy satellites to the conventional Auger transition in accordance with the excitation spectrum.
Autre version
http://dx.doi.org/10.1103/PhysRevB.38.5392
Type de publication
Resource Types::text::journal::journal article
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