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Schilt, Stephane
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Schilt, Stephane
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9 Résultats
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- PublicationAccès libreCarrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser
; ; ; We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard ƒ-to-2ƒ interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments. - PublicationAccès libreCarrier-Envelope Offset Frequency Stabilization of a Fiber Laser by Cross Gain Modulation
; We present the first carrier-envelope offset (CEO) frequency stabilization of a fiber laser by cross gain modulation. The Yb-doped fiber laser is mode-locked by nonlinear polarization evolution and emits 32-nm wide dissipative solitons at a repetition rate of 125 MHz with 150 mW of average output power. A continuous wave laser signal at a wavelength of 1025 nm is used as an intracavity power modulator. A low power of only 200 μW of modulator signal is coupled into the fiber laser and amplified in the gain segment. This signal cross modulates the laser gain, achieving 40 times larger modulation bandwidth of the intracavity laser power than with standard pump-current control. A tight CEO lock is demonstrated with 361 mrad of residual integrated phase noise (from 1 Hz to 1 MHz). The method allows easy implementation in many existing fiber laser frequency combs based on various saturable absorbers and fiber configurations. - PublicationAccès libreFull stabilization and characterization of an optical frequency comb from a diode-pumped solid-state laser with GHz repetition rate
; ; ; ; - PublicationAccès libreCarrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regime
; ; ; ; ; ; We demonstrate the carrier-envelope offset (CEO) frequency stabilization of a Kerr lens mode-locked Yb:Lu2O3 thin-disk laser oscillator operating in the strongly self-phase modulation (SPM) broadened regime. This novel approach allows overcoming the intrinsic gain bandwidth limit and is suited to support frequency combs from sub-100-fs pulse trains with very high output power. In this work, strong intra-oscillator SPM in the Kerr medium enables the optical spectrum of the oscillating pulse to exceed the bandwidth of the gain material Yb: Lu2O3 by a factor of two. This results in the direct generation of 50-fs pulses without the need for external pulse compression. The oscillator delivers an average power of 4.4 W at a repetition rate of 61 MHz. We investigated the cavity dynamics in this regime by characterizing the transfer function of the laser output power for pump power modulation, both in continuous-wave and mode-locked operations. The cavity dynamics in mode-locked operation limit the CEO modulation bandwidth to ~10 kHz. This value is sufficient to achieve a tight phase-lock of the CEO beat via active feedback to the pump current and yields a residual in-loop integrated CEO phase noise of 197 mrad integrated from 1 Hz to 1 MHz. - PublicationAccès libreFrequency Comb Stabilization of Ultrafast Lasers by Opto-Optical Modulation of Semiconductors
; ; In this paper, we review the current state and discuss new developments in opto-optical modulation (OOM) of semiconductor elements for frequency comb self-referenced stabilization of ultrafast lasers. This method has been successfully used for carrier-envelope offset (CEO) frequency stabilization of diodepumped solid-state lasers operating in 1-μm and 1.5-μm regimes, providing high feedback bandwidth and resulting in low noise performance. We compare the achieved results for Er- and Yb-based laser materials and in different regimes of repetition rates up to 1 GHz. In addition, we present the first semiconductor OOM for CEO stabilization in an ultrafast fiber laser. Moreover, we discuss requirements and design guidelines for OOM chips. In most demonstrations, semiconductor saturable absorber mirrors have been used for OOM, which in parallel were also responsible for pulse formation. By separating the OOM functionality from the pulse formation, we expect that it will enable low-noise CEO stabilization in other types of ultrafast lasers, such as, for example, high-power Kerr-lens mode-locked thin disk lasers. - PublicationAccès libreCarrier-envelope offset stabilization of a GHz repetition rate femtosecond laser using opto-optical modulation of a SESAM
; ; ; We demonstrate, to the best of our knowledge, the first carrier-envelope offset (CEO) frequency stabilization of a GHz femtosecond laser based on opto-optical modulation (OOM) of a semiconductor saturable absorber mirror (SESAM). The 1.05-GHz laser is based on a Yb:CALGO gain crystal and emits sub-100-fs pulses with 2.1-W average power at a center wavelength of 1055 nm. The SESAM plays two key roles: it starts and stabilizes the mode-locking operation and is simultaneously used as an actuator to control the CEO frequency. This second functionality is implemented by pumping the SESAM with a continuous-wave 980-nm laser diode in order to slightly modify its nonlinear reflectivity. We use the standard ƒ-to-2ƒ method for detection of the CEO frequency, which is stabilized by applying a feedback signal to the current of the SESAM pump diode. We compare the SESAM-OOM stabilization with the traditional method of gain modulation via control of the pump power of the Yb:CALGO gain crystal. While the bandwidth for gain modulation is intrinsically limited to ∼250 kHz by the laser cavity dynamics, we show that the OOM provides a feedback bandwidth above 500 kHz. Hence, we were able to obtain a residual integrated phase noise of 430 mrad for the stabilized CEO beat, which represents an improvement of more than 30% compared to gain modulation stabilization. - PublicationAccès libreCarrier-envelope offset frequency stabilization of a gigahertz semiconductor disk laser
; ; ; ; ; - PublicationAccès libreFrequency Tuning and Modulation of a Quantum Cascade Laser with an Integrated Resistive Heater
; - PublicationAccès libreGreen-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power
; ; ; ; We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.