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Hofstetter, Daniel

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Hofstetter, Daniel
Affiliation principale
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Ancien.ne collaborateur.trice
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https://libra.unine.ch/handle/123456789/472

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  • Publication
    Accès libre
    MBE growth of nitride-based photovoltaic intersubband detectors
    (2006)
    Monroy, Eva
    ;
    Guillot, Fabien
    ;
    Leconte, Sylvain
    ;
    Bellet-Amalric, Edith
    ;
    Baumann, Esther
    ;
    Giorgetta, Fabrizio R.
    ;
    Hofstetter, Daniel 
    ;
    Nevou, Laurent
    ;
    Tchernycheva, Maria
    ;
    Doyennette, Laeticia
    ;
    Julien, François H.
    ;
    Remmele, T.
    ;
    Albrecht, M.
    In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector (QWIP) structures, including the Si-doped GaN/AlN short-period superlattice of the active region, conductive AlGaN claddings and integration of the final device. The growth of Si-doped GaN/AlN multiple quantum well (QW) structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33–1.91 μm wavelength range are measured on samples with QW thickness varying from 1 to 2.5 nm. The absorption exhibits Lorentzian shape with a line width around 100 meV in QWs doped 5×1019 cm−3. To prevent partial depletion of the QWs owing to the internal electric field, we have developed highly-conductive Si-doped AlGaN cladding layers using In as a surfactant during growth. Complete ISB photodetectors with 40 periods of 1 nm-thick Si-doped GaN QWs with 2 nm-thick AlN barriers have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Temperature-dependent photovoltage measurements reveal a narrow (90 meV) detection peak at 1.39 μm.