Electron spin resonance and optical characterization of defects in microcrystalline silicon

Electron spin resonance (ESR), constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS), Raman and IR spectroscopy have been used to measure microcrystalline silicon films. Besides standard defects with a <i>g</i>-value of 2.0055, new defects with a <i>g</i>-value ~2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed.