Microcrystalline p–i–n cells: a drift-controlled device?

The objective of this paper is to get more insight into the physics of microcrystalline silicon based solar cell by studying electric field profiles, spectral responses and current–voltage characteristics. Based on a comparison with a-Si:H p–i–n and c-Si p–n diodes, we concluded that <i>μc</i>-Si:H p–i–n devices are not field-controlled despite the presence of a high electric field in the i-layer.