A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC

Anelli, G.; Commichau, S. C.; Despeisse, M.; Dissertori, G.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, Arvind; Viertel, G. M.; Wyrsch, Nicolas

doi:10.1016/j.nima.2003.11.024

A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC

Author(s)

Anelli, G.

Commichau, S. C.

Despeisse, M.

Dissertori, G.

Jarron, P.

Miazza, C.

Moraes, D.

Shah, Arvind

Viertel, G. M.

Wyrsch, Nicolas

Date issued

2004

In

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2004/518/1-2/366-372

Subjects

metrology solid state detectors

Abstract

A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC). For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n–i–p a-Si:H diode array deposited on a glass substrate and on the a-Si:H above ASIC prototype detector.