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  4. Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells

Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells

Author(s)
Faÿ Sylvie
Feitknecht, L.
Schlüchter, R.
Kroll, U.
Vallat-Sauvain, Evelyne
Shah, Arvind
Date issued
2006
In
Solar Energy Materials and Solar Cells, Elsevier, 2006/90/18-19/2960-2967
Subjects
TCO LP-CVD zinc oxide thin-film silicon solar cells light-scattering capacity
Abstract
Doped ZnO layers deposited by low-pressure chemical vapour deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. <br> Surface roughness of these ZnO layers is related to their light-scattering capability; this is shown to be of prime importance to enhance the current generation in thin-film silicon solar cells. Surface roughness has been tuned over a large range of values, by varying thickness and/or doping concentration of the ZnO layers. <br> A method is proposed to optimize the light-scattering capacity of ZnO layers, and the incorporation of these layers as front transparent conductive oxides for p–i–n thin-film microcrystalline silicon solar cells is studied.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/61017
DOI
10.1016/j.solmat.2006.06.003
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Fa_S._-_Rough_ZnO_layers_by_LP-CVD_process_20080814.pdf

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