Boron <i>K</i>-shell spectroscopy of boron-doped silicon

The B <i>K</i>-edge spectra of various model compounds (BF₃, KBF₄, B₂O₃, B(OH)₃, orthocarborane (B₁₀H₁₀C₂H₂) and elemental boron) were investigated to characterize the sensitivity of B <i>K</i>-edge spectra to local chemical environment. Electron yield detection of synchrotron photoabsorption at the boron <i>K</i>-edge was used to study the B sites in Si(B) epilayers grown by molecular beam epitaxy and <i>in situ</i> B doped from evaporated B₂O₃. Although there were interesting spectral variations with composition and annealing, comparison between the x-ray electron yield results and those from secondary ion mass spectroscopy and electrochemical capacitance voltage measurements indicate that the yield spectra are strongly influenced by surface segregation.