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  4. Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures

Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures

Author(s)
Wang, Z.
Reimann, K.
Woerner, M.
Elsaesser, T.
Hofstetter, Daniel  
Laboratoire temps-fréquence  
Hwang, J.
Schaff, William J.
Eastman, L. F.
Date issued
2005
In
Physical Review Letters, American Physical Society (APS), 2005/94/037403/1-4
Abstract
We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al<sub>0.8</sub>Ga<sub>0.2</sub>N heterostructure. Femtosecond two-color pump-probe experiments in the midinfrared reveal spectral holes on different vibronic transitions separated by the LO-phonon frequency. These features wash out with a decay time of 80 fs due to spectral diffusion. The remaining nonlinear transmission changes decay with a time constant of 380 fs. All results observed are described by the independent boson model.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/60045
DOI
10.1103/PhysRevLett.94.037403
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Wang_Z._-_Optical_Phonon_Sidebands_of_Elecronic_20080428.pdf

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