High frequency (<i>f</i>=2.37 GHz) room temperature operation of 1.55 µm AlN/GaN-based intersubband detector

The fabrication and high frequency operation of a room temperature 1.55 µm intersubband detector based on a regular AlN/GaN superlattice is reported. This photovoltaic device was capable of detecting a sinusoidally modulated laser beam at high frequencies of up to 2.37 GHz.