MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Bour, David P.; Kneissl, Michael; Hofstetter, Daniel; Romano, Linda T.; McCluskey, Matthew D.; van de Walle, C. G.; Krusor, B. S.; Dunnrowicz, Clarence; Donaldson, Rose M.; Walker, J.; Johnson, N. M.

doi:10.1016/S0921-5107(98)00412-7

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

Author(s)

Bour, David P.

Kneissl, Michael

Hofstetter, Daniel

Laboratoire temps-fréquence

Romano, Linda T.

McCluskey, Matthew D.

van de Walle, C. G.

Krusor, B. S.

Dunnrowicz, Clarence

Donaldson, Rose M.

Walker, J.

Johnson, N. M.

Date issued

1999

In

Materials Science and Engineering B, Elsevier, 1999/59/1-3/33-38

Subjects

Semiconductor lasers CVD Nitrides Epitaxial deposition Quantum well semiconductor epitaxial layers Quantum well lasers Semiconductor heterojunctions

Abstract

We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were ~400 nm. The lowest threshold current density obtained was 6 kA cm<sup>−2</sup> with maximum output powers of 50 mW per facet. Optically-pumped distributed-feedback laser operation was also achieved.