Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguide
Author(s)
Date issued
1995
In
Electronics Letters, Institution of Engineering and Technology (IET), 1995/31/12/980-982
Subjects
Distributed Bragg Reflector Lasers Semiconductor quantum wells
Abstract
A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2 W/A.
Publication type
journal article
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Hofstetter_D._-_Ridge_waveguide_DBR_laser_with_nonabsorbing_20080603.pdf
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