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  4. High frequency measurements on an AlN/GaN-based intersubband detector at 1550 and 780 nm

High frequency measurements on an AlN/GaN-based intersubband detector at 1550 and 780 nm

Author(s)
Hofstetter, Daniel  
Laboratoire temps-fréquence  
Baumann, Esther
Giorgetta, Fabrizio R.
Dawlaty, Jahan
George, Paul A.
Rana, Farhan
Guillot, Fabien
Monroy, Eva
Date issued
2008
In
Journal of Applied Physics, American Institute of Physics (AIP), 2008/92//231104 1-3
Abstract
We report on high frequency measurements on an AlN/GaN-based intersubband detector using mode-locked solid state lasers. Our experiments involving laser wavelengths of 1550 and 780 nm demonstrate not only the capability of such devices to work both at the fundamental and at a higher order intersubband transition, but they also allowed us to push the high frequency detection limit up to a value of 13.3 GHz. From the shape of the harmonic decay, we conclude that this limit is not due to intrinsic properties of the detector.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/57859
DOI
10.1063/1.2939433
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Hofstetter_D._-_High_frequency_measurements_on_an_AIN_GaN-based_20101220.pdf

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