Latest developments in GaN-based quantum devices for infrared optoelectronics

Monroy, Eva; Guillot, Fabien; Leconte, Sylvain; Nevou, Laurent; Doyennette, Laeticia; Tchernycheva, Maria; Julien, François H.; Baumann, Esther; Giorgetta, Fabrizio R.; Hofstetter, Daniel

doi:10.1007/s10854-007-9482-3

Latest developments in GaN-based quantum devices for infrared optoelectronics

Author(s)

Monroy, Eva

Guillot, Fabien

Leconte, Sylvain

Nevou, Laurent

Doyennette, Laeticia

Tchernycheva, Maria

Julien, François H.

Baumann, Esther

Giorgetta, Fabrizio R.

Hofstetter, Daniel

Laboratoire temps-fréquence

Date issued

2008

In

Journal of Materials Science : Materials in Electronics, Springer, 2008/19/8-9/821-827

Abstract

In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, including the first experimental observation of intersubband photoluminescence in nitride nanostructures.