Di Francesco, Joab

Nom

Di Francesco, Joab

Affiliation principale

Institut de physique

Fonction

Assistant

Identifiants

https://libra.unine.ch/handle/123456789/493

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Métadonnées seulement
Si-Interdiffusion in heavily doped AIN-GaN-based quantum well intersubband photodetectors
(2011)
Hofstetter, Daniel
;
Di Francesco, Joab
;
Martin, Denis
;
Grandjean, Nicolas
;
Kotsar, Yulia
;
Monroy, Eva
We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000 °C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions. © 2011 American Institute of Physics.
Métadonnées seulement
Performance Improvement of AIN-GaN-Based Intersubband Detectors by Using Qantum Dots
(2010)
Hofstetter, Daniel
;
Di Francesco, Joab
;
Kandaswamy, Prem K.
;
Das, Aparna
;
Valdueza-Felip, Sirona
;
Monroy, Eva