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  • Publication
    Accès libre
    ZnO Devices and Applications: A Review of Current Status and Future Prospects
    (2010)
    Özgür Ümit
    ;
    ;
    Morkoç, Hadis
    ZnO is an attractive material for applications in electronics, photonics, acoustics, and sensing. In optical emitters, its high exciton binding energy (60 meV) gives ZnO an edge over other semiconductors such as GaN if reproducible and reliable p-type doping in ZnO were to be achieved, which currently remains to be the main obstacle for realization of bipolar devices. On the electronic side, ZnO holds some potential in transparent thin film transistors (TFTs) owing to its high optical transmittivity and high conductivity. Among the other promising areas of application for ZnO are acoustic wave devices, due to large electromechanical coupling in ZnO, and devices utilizing nanowires/nanorods such as biosensors and gas sensors and solar cells, since it is relatively easy to produce such forms of ZnO nanostructures, which have good charge carrier transport properties and high crystalline quality. Despite the significant progress made, there is still a number of important issues that need to be resolved before ZnO can be transitioned to commercial use, not to mention the stiff competition it is facing with GaN, which is much more mature in terms of devices. In this paper, recent progress in device applications of ZnO is discussed and a review of critical issues for realization of ZnO-based devices is given.
  • Publication
    Accès libre
    Edge- and surface-emitting 10.1 μm quantum cascade distributed feedback lasers
    (2000) ;
    Faist, Jérôme
    ;
    Beck, Mattias
    ;
    Müller, Antoine
    ;
    Oesterle, Ursula
    We present measurement results on high-power low-threshold quantum cascade-distributed feedback lasers emitting infrared radiation at 10.16 μm. A lateral current injection scheme allowed the use of a strongly coupled surface grating without metal coverage and epitaxial re-growth. Although this design resulted in a simplified processing, the fabrication of high-performance edge- and surface-emitting devices was demonstrated. For the edge-emitting laser, we used a standard first-order grating with a period of 1.57 μm, and for the surface emitter, a second-order grating with a period of 3.15 μm was used. Maximal output powers in excess of 200 mW at 85 K and 70 mW at 300 K were achieved for both configurations. The threshold current densities at 85 K (300 K) were 1.85 kA/cm2 (5.4 kA/cm2) and 2.1 kA/cm2 (5.6 kA/cm2) for edge and surface emitters, respectively.