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Hofstetter, Daniel

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Hofstetter, Daniel
Affiliation principale
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Ancien.ne collaborateur.trice
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https://libra.unine.ch/handle/123456789/472

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  • Publication
    Accès libre
    Mid-infrared quantum cascade detectors for applications in spectroscopy and pyrometry
    (2010)
    Hofstetter, Daniel 
    ;
    Giorgetta, Fabrizio R.
    ;
    Baumann, Esther
    ;
    Yang, Quankui
    ;
    Manz, Christian
    ;
    Köhler, Klaus
    An overview of quantum cascade detector technology for the near- and mid-infrared wavelength range will be given. Thanks to photovoltaic instead of photoconductive operation, quantum cascade detectors offer great opportunities in terms of detection speed, room temperature operation, and detectivity. Besides some crucial issues dealing with fabrication and general characteristics, some possibilities for performance improvement will also be briefly presented. In a theory section, some basic considerations adopted from photoconductive detectors confirm the necessity of various trade-offs for the optimization of such devices. Nevertheless, we will show several possible measures to push the key performance figures of these detectors closer to their physical and technological limits.
  • Publication
    Accès libre
    Quantum Cascade Detectors
    (2009)
    Giorgetta, Fabrizio R.
    ;
    Baumann, Esther
    ;
    Graf, Marcel
    ;
    Yang, Quankui
    ;
    Manz, Christian
    ;
    Köhler, Klaus
    ;
    Beere, Harvey E.
    ;
    Ritchie, David A.
    ;
    Linfield, Edmund
    ;
    Davies, Alexander G.
    ;
    Fedoryshyn, Yuriy
    ;
    Jackel, Heinz
    ;
    Fischer, Milan
    ;
    Faist, Jérôme
    ;
    Hofstetter, Daniel 
    This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 μm to THz radiation at 87 μm using different semiconductor material systems.