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  • Publication
    Accès libre
    Ridge waveguide DBR laser with nonabsorbing grating and transparent integrated waveguide
    (1995) ;
    Zappe, H. P.
    ;
    Epler, J. E.
    A ridge waveguide GaAs/AlGaAs DBR laser with a nonabsorbing grating section and a monolithically integrated transparent waveguide has been fabricated by the use of vacancy-enhanced quantum well disordering (VED). This technique allows the definition of absorbing and transparent regions, and requires only a single growth step. No VED-enhanced degradation of the laser quality was noted. The optical output power was 5 mW from both the cleaved facet and the grating reflector, threshold currents were 25 mA and the slope efficiencies were 0.2 W/A.
  • Publication
    Accès libre
    Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-defined recessed gratings
    (1994) ;
    Zappe, H. P.
    ;
    Epler, J. E.
    ;
    Söchtig, J.
    A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications.