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Hofstetter, Daniel

Nom
Hofstetter, Daniel
Affiliation principale
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Ancien.ne collaborateur.trice
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https://libra.unine.ch/handle/123456789/472

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  • Publication
    Métadonnées seulement
    Edge- and surface-emitting 10.1
    (2000)
    Hofstetter, Daniel 
    ;
    Faist, Jérôme
    ;
    Beck, Mattias
    ;
    Muller, Antoine
    ;
    Oesterle, Ursula
    We present measurement results on high-power low-threshold quantum cascade-distributed feedback lasers emitting infrared radiation at 10.16 mu m. A lateral current injection scheme allowed the use of a strongly coupled surface grating without metal coverage and epitaxial re-growth. Although this design resulted in a simplified processing, the fabrication of high-performance edge- and surface-emitting devices was demonstrated. For the edge-emitting laser, we used a standard first-order grating with a period of 1.57 mu m, and for the surface emitter, a second-order grating with a period of 3.15 mu m was used. Maximal output powers in excess of 200 mW at 85 K and 70 mW at 300 K were achieved for both configurations. The threshold current densities at 85 K (300 K) were 1.85 kA/cm(2) (5.4 kA/cm(2)) and 2.1 kA/cm(2) (5.6 kA/cm(2)) for edge and surface emitters, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.
  • Publication
    Métadonnées seulement
    Demonstration of high-performance 10.16
    (1999)
    Hofstetter, Daniel 
    ;
    Faist, Jérôme
    ;
    Beck, Mattias
    ;
    Muller, Antoine
    ;
    Oesterle, Ursula
    We present measurement results on high-power low threshold quantum cascade distributed feedback lasers emitting infrared radiation at 10.16 mu m. A lateral current injection scheme allowed the use of a strongly coupled surface grating without metal coverage and epitaxial regrowth. Although this design resulted in a simplified processing, the fabrication of high performance devices was demonstrated. The laser emitted 230 mW of pulsed power at 85 K, and 80 mW at room temperature. Threshold current densities of 1.85 kA/cm(2) at 85 K and 5.4 kA/cm(2) at room temperature were observed. Since the spectrum showed single mode behavior for all temperatures and power levels of the operating range, this device will be ideal for optical sensor applications. (C) 1999 American Institute of Physics. [S0003-6951(99)01931-2].