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Hofstetter, Daniel

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Hofstetter, Daniel
Affiliation principale
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Ancien.ne collaborateur.trice
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https://libra.unine.ch/handle/123456789/472

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  • Publication
    Accès libre
    Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown by Metal–Organic Vapor Phase Epitaxy
    (2008)
    Lupu, A.
    ;
    Julien, François H.
    ;
    Golka, Sebastian
    ;
    Pozzovivo, G.
    ;
    Strasser, Gottfried
    ;
    Baumann, Esther
    ;
    Giorgetta, Fabrizio R.
    ;
    Hofstetter, Daniel 
    ;
    Nicolay, S.
    ;
    Mosca, M.
    ;
    Feltin, E.
    ;
    Carlin, J.-F.
    ;
    Grandjean, N.
    We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the 1.5- to 1.58-μm spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.