Hofstetter, Daniel

Nom

Hofstetter, Daniel

Affiliation principale

Institut de physique

Fonction

Ancien.ne collaborateur.trice

Identifiants

https://libra.unine.ch/handle/123456789/472

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Resonant tunnelling and intersubband absorption in AlN - GaN superlattices
(2005)
Baumann, Esther
;
Giorgetta, Fabrizio R.
;
Hofstetter, Daniel
;
Wu, Hong
;
Schaff, William J.
;
Eastman, Lester F.
;
Kirste, Lutz
We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2-dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons.