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Intersubband Transition-Based Processes and Devices in A1N/GaN-Based Heterostructures

Daniel Hofstetter, Esther Baumann , Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George , Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy , Fabien Guillot & Eva Monroy

Résumé We report on the physics, epitaxial growth, fabrication, and characterization of optoelectronic devices based on intersubband transitions in the AlN/GaN material system. While in 1999, only results of optical absorption experiments could be shown, photodetectors and modulators with operation frequencies beyond 10 GHz as well as optically
pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, andlight emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given.
   
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Citation Hofstetter, D., Baumann , E., Giorgetta, F. R., Théron, R., Wu, H., Schaff, W. J., Dawlaty, J., George , P. A., Eastman, L. F., Rana, F., Kandaswamy , P. K., Guillot, F., & Monroy, E. (2010). Intersubband Transition-Based Processes and Devices in A1N/GaN-Based Heterostructures. Proceedings of the IEEE, 98(7), 1234-1248.
   
Type Article de périodique (Anglais)
Date de publication 2010
Nom du périodique Proceedings of the IEEE
Volume 98
Numéro 7
Pages 1234-1248