Intersubband Transition-Based Processes and Devices in A1N/GaN-Based Heterostructures
Daniel Hofstetter, Esther Baumann , Fabrizio Raphael Giorgetta, Ricardo Théron, Hong Wu, William J. Schaff, Jahan Dawlaty, Paul A. George , Lester F. Eastman, Farhan Rana, Prem K. Kandaswamy , Fabien Guillot & Eva Monroy
| Résumé |
We report on the physics, epitaxial growth, fabrication, and
characterization of optoelectronic devices based on intersubband
transitions in the AlN/GaN material system. While in 1999, only
results of optical absorption experiments could be shown,
photodetectors and modulators with operation frequencies beyond 10
GHz as well as optically pumped light emitters have been demonstrated recently. This is the reason for a comprehensive report on the most important properties of such devices. Beside some basic theoretical considerations, we will concentrate on the fabrication and characterization of modulators, switches, photodetectors, andlight emitters. At the end of this paper, an outlook to future trends and developments in this emerging field will be given. |
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| Citation | Hofstetter, D., Baumann , E., Giorgetta, F. R., Théron, R., Wu, H., Schaff, W. J., Dawlaty, J., George , P. A., Eastman, L. F., Rana, F., Kandaswamy , P. K., Guillot, F., & Monroy, E. (2010). Intersubband Transition-Based Processes and Devices in A1N/GaN-Based Heterostructures. Proceedings of the IEEE, 98(7), 1234-1248. |
| Type | Article de périodique (Anglais) |
| Date de publication | 2010 |
| Nom du périodique | Proceedings of the IEEE |
| Volume | 98 |
| Numéro | 7 |
| Pages | 1234-1248 |