Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser

We demonstrate room-temperature pulsed operation of an electrically injected InGaN/GaN-based distributed feedback laser with an emission wavelength of 403 nm. The threshold current of a 1000-µm-long and 20-<i>µ</i>m-wide device was 3.2 A; corresponding to a threshold current density of 16 kA/cm². The 3rd order grating providing feedback was defined holographically and dry etched into the upper waveguiding layer by chemically assisted ion beam etching. We observed single mode operation of the laser with a side mode suppression ratio of 15 dB over a temperature range of about 30 K.