Si-Interdiffusion in heavily doped AIN-GaN-based quantum well intersubband photodetectors
Author(s)
Martin, Denis
Grandjean, Nicolas
Kotsar, Yulia
Monroy, Eva
Date issued
2011
In
Applied Physics Letters
Vol
241101
No
98
From page
1
To page
1
Abstract
We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000 °C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude
of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions.
© 2011 American Institute of Physics.
of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions.
© 2011 American Institute of Physics.
Publication type
journal article