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  4. Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regime

Carrier-envelope offset frequency stabilization of a thin-disk laser oscillator operating in the strongly self-phase modulation broadened regime

Author(s)
Modsching, Norbert  
Laboratoire temps-fréquence  
Paradis, Clément  
Laboratoire temps-fréquence  
Brochard, Pierre  
Laboratoire temps-fréquence  
Jornod, Nayara  
Laboratoire temps-fréquence  
Gürel, Kutan
Kränkel, Christian
Schilt, Stephane  
Laboratoire temps-fréquence  
Wittwer, Valentin  
Laboratoire temps-fréquence  
Südmeyer, Thomas  
Laboratoire temps-fréquence  
Date issued
2018
In
Optics Express, Optical Society of America
Vol
26
No
22
From page
28461
To page
28468
Abstract
We demonstrate the carrier-envelope offset (CEO) frequency stabilization of a Kerr lens mode-locked Yb:Lu<sub>2</sub>O<sub>3</sub> thin-disk laser oscillator operating in the strongly self-phase modulation (SPM) broadened regime. This novel approach allows overcoming the intrinsic gain bandwidth limit and is suited to support frequency combs from sub-100-fs pulse trains with very high output power. In this work, strong intra-oscillator SPM in the Kerr medium enables the optical spectrum of the oscillating pulse to exceed the bandwidth of the gain material Yb: Lu<sub>2</sub>O<sub>3</sub> by a factor of two. This results in the direct generation of 50-fs pulses without the need for external pulse compression. The oscillator delivers an average power of 4.4 W at a repetition rate of 61 MHz. We investigated the cavity dynamics in this regime by characterizing the transfer function of the laser output power for pump power modulation, both in continuous-wave and mode-locked operations. The cavity dynamics in mode-locked operation limit the CEO modulation bandwidth to ~10 kHz. This value is sufficient to achieve a tight phase-lock of the CEO beat via active feedback to the pump current and yields a residual in-loop integrated CEO phase noise of 197 mrad integrated from 1 Hz to 1 MHz.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/65636
DOI
10.1364/OE.26.028461
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Modsching_N.-Carrier-envelope_offset-20181019.pdf

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