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  4. Passively Q-Switched Thulium Microchip Laser

Passively <i>Q</i>-Switched Thulium Microchip Laser

Author(s)
Gaponenko, Maxim  
Laboratoire temps-fréquence  
Kuleshov, Nikolay
Südmeyer, Thomas  
Laboratoire temps-fréquence  
Date issued
2016
In
IEEE Photonics Technology Letters, IEEE
Vol
28
No
2
From page
147
To page
150
Subjects
Microchip lasers <i>Q</i>-switched lasers solid-state lasers thulium
Abstract
We present the first passively <i>Q</i>-switched thulium microchip laser. The diode-pumped laser incorporates a Tm:KYW gain medium and an InGaAs semiconductor saturable absorber mirror. The laser emits pulses with a duration of 2.4 ns at a repetition rate of 1.2 MHz with an average output power of 130 mW at a wavelength of 1905 nm. It operates in a fundamental TEM<sub>00</sub> mode with M<sup>2</sup> < 1.1. The <i>Q</i>-switched pulse train is very stable with pulse-to-pulse intensity fluctuations <10% and a timing jitter of < ± 50 ns. Our microchip laser appears well suited as a seed in pulsed 2-<i>μ</i>m fiber amplifier systems for applications like material processing. In addition, we present new power scaling results for continuous-wave Tm-microchip lasers, achieving 1.6 W of output power in a fundamental TEM<sub>00</sub> mode. The slope efficiency relative to the absorbed pump power is as high as 74%, and the optical-to-optical efficiency is 41%. A maximum output power of 2.6 W is achieved in a TEM<sub>01∗</sub>-doughnutlike transverse mode. In all the cases, no active cooling is applied to the gain medium.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/65491
DOI
10.1109/LPT.2015.2487562
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