Preliminary radiation tests of 32 μm thick hydrogenated amorphous silicon films

Despeisse, M.; Jarron, P.; Johansen, K. M.; Moraes, D.; Shah, Arvind; Wyrsch, Nicolas

doi:10.1016/j.nima.2005.06.012

Preliminary radiation tests of 32 μm thick hydrogenated amorphous silicon films

Author(s)

Despeisse, M.

Jarron, P.

Johansen, K. M.

Moraes, D.

Shah, Arvind

Wyrsch, Nicolas

Date issued

2005

In

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2005/552/1-2/88-92

Subjects

radiation damage amorphous silicon

Abstract

Preliminary radiation tests of hydrogenated amorphous silicon n–i–p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.