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  4. Demonstration of a ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser

Demonstration of a ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser

Author(s)
Hofstetter, Daniel  
Laboratoire temps-fréquence  
Théron, Ricardo
El-Shaer, Abdel-Hamid
Bakin, Andrey
Waag, Andreas
Date issued
2008
In
Journal of Applied Physics, American Institute of Physics (AIP), 2008/93//101109 1-3
Abstract
A ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser operating at an emission wavelength of 360.7 nm is demonstrated. The photonic crystal providing optical feedback was fabricated in the form of parallel grooves with a period of 277.3 nm and a depth of 100 nm in a Si<sub>3</sub>N<sub>4</sub> layer deposited directly on the epitaxial material. At a temperature of 11 K, 16 mW peak power is emitted from the laser surface, and the threshold intensity amounts to 0.33 MW/cm<sup>2</sup>. From temperature-dependent output power versus pump intensity curves, we deduced a <i>T</i><sub>0</sub> of 60 K and a maximal operating temperature of 135 K.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/57860
DOI
10.1063/1.2978203
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Hofstetter_Daniel_-_Demonstration_of_a_ZnO_MgZnO-based_one-dimensional_20101220.pdf

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