Fast deposition of μc-Si:H by restrictive dilution and enhanced HF-power
Author(s)
Torres, P.
Keppner, H.
Meier, Johannes
Kroll, U.
Beck, N.
Shah, A.
Date issued
1997
In
Physica status solidi. A. Applied research, Wiley, 1997/163/2/R9-R10
Abstract
The purpose of this paper is to demonstrate that an enhanced deposition rate in excess of 10Å/s with reasonnable cell performances is however, indeed possible while remaining within the Very High Frequency-Glow Discharge (VHF-GD) deposition technique (at plasma excitation frequencies of 70 to 130MHz).
