Excitation of a higher order transverse mode in an optically pumped In<sub>0.15</sub>Ga<sub>0.85</sub>N/In<sub>0.05</sub>Ga<sub>0.95</sub>N multiquantum well laser structure
Author(s)
Date issued
1997
In
Applied Physics Letters, American Institute of Physics (AIP), 1997/70//1650-1652
Abstract
We report a comparison between measured and calculated far field data for an optically pumped In<sub>0.15</sub>Ga<sub>0.85</sub>N/In<sub>0.05</sub>Ga<sub>0.95</sub>N multiquantum well laser structure with AlGaN cladding layers. Optical pumping of the semiconductor device was performed with a pulsed 337 nm N<sub>2</sub> laser, whose beam was focused to a narrow stripe. A thin upper cladding layer allowed efficient pumping of the In<sub>0.15</sub>Ga<sub>0.85</sub>N/In<sub>0.05</sub>Ga<sub>0.95</sub>N laser structure. Despite high distributed cavity losses of at least 30 cm – 1, and although gain occurred in the small active region only, the seventh order transverse mode was supported in a waveguide formed by the entire 5-<i>µ</i>m-thick epitaxial layer structure. Excellent agreement is demonstrated between measured and calculated far field patterns of the lasing mode.
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