Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane

Author(s)
Platz, R.
Wagner, S.
Date issued
1992
In
Applied Physics Letters, American Institute of Physics (AIP), 1992/73/9/1236-1238
Abstract
Microcrystalline silicon (<u>µ</u>c-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH<sub>2</sub>Cl<sub>2</sub>) is added. A dark conductivity of 1.6 × 10<sup>–8</sup> S/cm and an activation energy of 0.62 eV are obtained. No special gas purification or microdoping is required. SiH<sub>2</sub>Cl<sub>2</sub> in small amounts has the additional effect of enhancing the crystallinity and reducing the oxygen incorporation by over a factor of 2. Sub-band-gap absorption spectroscopy indicates a low defect density.
Publication type
journal article
Identifiers
https://libra.unine.ch/handle/20.500.14713/62127
DOI
10.1063/1.122138
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