Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in <i>a</i>-Si:H
Author(s)
Sauvain, E.
Pipoz, P.
Shah, Arvind
Hubin, J.
Date issued
1994
In
Journal of Applied Physics, American Institute of Physics (AIP), 1994/75/3/1722-1726
