Use of angle-resolved photoemission and density functional theory for surface structural analysis of YSi<sub>2</sub>
Author(s)
Koitzsch, Christian
Bovet, M.
Garnier, Michael Bernard Gunnar
Aebi, Philipp
Rogero, C.
Martín-Gago, J. A.
Date issued
2004
In
Surface Science, Elsevier, 2004/566-568/2/1047-1051
Subjects
density functional calculations angle resolved photoemission surface electronic phenomena (work function surface potential surface states etc.) surface structure morphology roughness and topography metal–semiconductor interfaces yttrium silicon
Abstract
The atomic structure of two-dimensional yttrium silicide epitaxially grown on Si(1 1 1) was investigated by means of density functional theory calculations and angle-resolved photoemission experiments. The obtained accuracy of the calculations allowed to discriminate different surface arrangements in a quantitative way via comparing their theoretical band structure to the experimental result. Theoretically we find significant changes in the dispersion of a surface localized band upon varying the thickness of the topmost silicon bilayer. For a thickness of 0.4 Å of the topmost silicon bilayer a strong asymmetry of the surface localized band with respect to <i>‾Γ</i> is found, while a thickness of 0.8 Å yields a more symmetric dispersion of the band. By comparison with the experimental photoemission results, which show a rather symmetric band around <i>‾Γ</i>, we can conclude that the topmost bilayer has a thickness of 0.8 Å.
Publication type
journal article
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