Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Despeisse, M.; Anelli, G.; Commichau, S. C.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, Arvind; Wyrsch, Nicolas; Viertel, G. M.

doi:10.1016/j.nima.2003.11.022

Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

Author(s)

Despeisse, M.

Anelli, G.

Commichau, S. C.

Dissertori, G.

Garrigos, A.

Jarron, P.

Miazza, C.

Moraes, D.

Shah, Arvind

Wyrsch, Nicolas

Viertel, G. M.

Date issued

2004

In

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2004/518/1-2/357-361

Abstract

We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n–i–p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.