TFA pixel sensor technology for vertex detectors

Jarron, P.; Moraes, D.; Despeisse, M.; Dissertori, G.; Dunand, S.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G. M.; Wyrsch, Nicolas

doi:10.1016/j.nima.2005.11.242

TFA pixel sensor technology for vertex detectors

Author(s)

Jarron, P.

Moraes, D.

Despeisse, M.

Dissertori, G.

Dunand, S.

Kaplon. J.

Miazza, C.

Shah, Arvind

Viertel, G. M.

Wyrsch, Nicolas

Date issued

2005

In

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2005/560/1/122-126

Subjects

hydrogenated amorphous silicon TFA pixel detector radiation hardness

Abstract

Pixel microvertex detectors at the SLHC and a future linear collider face very challenging issues: extreme radiation hardness, cooling design, interconnections density and fabrication cost. As an alternative approach we present a novel pixel detector based on the deposition of a Hydrogenated Amorphous Silicon (a-Si:H) film on top of a readout ASIC. The Thin-Film on ASIC (TFA) technology is inspired by an emerging microelectronic technology envisaged for visible light Active Pixel Sensor (APS) devices. We present results obtained with a-Si:H sensor films deposited on a glass substrate and on ASIC, including the radiation hardness of this material up to a fluence of 3.5×10<sup>15</sup> p/cm<sup>2</sup>.