Intersubband photoconductivity at 1.6 <i>µ</i>m using a strain-compensated AlN/GaN superlattice
Giorgetta, Fabrizio R.
Schaff, William J.
Eastman, L. F.
Date de parution
Applied Physics Letters, American Institute of Physics (AIP), 2005/87/191102/1-3
We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around 6300 cm<sup>–1</sup> which corresponds to 1.6 <i>µ</i>m.
Type de publication
Resource Types::text::journal::journal article
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