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Intersubband photoconductivity at 1.6 <i>µ</i>m using a strain-compensated AlN/GaN superlattice
Auteur(s)
Baumann, Esther
Editeur(s)
Giorgetta, Fabrizio R.
Lu, H.
Chen, X.
Schaff, William J.
Eastman, L. F.
Golka, Sebastian
Schrenk, W.
Strasser, Gottfried
Date de parution
2005
In
Applied Physics Letters, American Institute of Physics (AIP), 2005/87/191102/1-3
Résumé
We report on intersubband absorption, photovoltaic, and photoconductive detection of near-infrared radiation in regular AlN/GaN superlattice structures. Photoconductive detection was achieved up to temperatures of 120 K. Simulation of the transition energies using a self-consistent Schrödinger-Poisson equation solver for our specific well width is in good agreement with the measurements. For a well width of 17 Å, the transition energy between ground state and first excited state in the GaN well is around 6300 cm<sup>–1</sup> which corresponds to 1.6 <i>µ</i>m.
Autre version
http://dx.doi.org/10.1063/1.2126130
Type de publication
Resource Types::text::journal::journal article
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