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Electronic transport in hydrogenated microcrystalline silicon: similarities with amorphous silicon
Auteur(s)
Droz, Corinne
Editeur(s)
Goerlitzer, M.
Wyrsch, Nicolas
Shah, Arvind
Date de parution
2000
In
Journal of Non-Crystalline Solids, Elsevier, 2000/266-269//319-324
Résumé
Undoped hydrogenated microcrystalline silicon (μc-Si:H) layers were grown by the very high frequency glow discharge (VHF-GD) technique under various deposition conditions. The electronic transport properties under illumination were investigated by means of steady-state photoconductivity and steady-state photocarrier grating methods. Similarly to hydrogenated amorphous silicon (a-Si:H), power law dependencies as a function of the generation rate are observed for the photoconductivity, for the ambipolar diffusion length, and for the parameter <i>b</i> (indicating the Fermi level). For μc-Si:H, as for a-Si:H, nearly constant product of (mobility × recombination time) of majority and minority carriers is observed as a function of the parameter <i>b</i>. Based on these similarities, we assume that the electronic transport model developed for a-Si:H remains valid for μc-Si:H.
Autre version
http://dx.doi.org/10.1016/S0022-3093(99)00718-8
Type de publication
Resource Types::text::journal::journal article
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