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Intersubband spectroscopy probing higher order interminiband transitions in AIN-GaN-based superlattices

Daniel Hofstetter, Joab Di Francesco, Prem K. Kandaswamy & Eva Monroy

Résumé We investigate midinfrared intersubband photodetectors based on short-period AlN/GaNsuperlattices with different quantum well thicknesses. Band structure calculations, as well as optical transmission and photovoltage measurements, underline the importance of higher order
interminiband transitions. In particular, it was found that optical transitions between the second and third minibands benefit from much larger electron displacements and oscillator strengths than those
between the first and second minibands. Our results suggest that optical rectification is therefore much more efficient for devices based on a higher order interminiband transition.
© 2011 American Institute of Physics.
   
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Citation Hofstetter, D., Di Francesco, J., Kandaswamy , P. K., & Monroy, E. (2011). Intersubband spectroscopy probing higher order interminiband transitions in AIN-GaN-based superlattices. Applied Physics Letters, 98(071104), 1-1.
   
Type Article de périodique (Anglais)
Date de publication 2011
Nom du périodique Applied Physics Letters
Volume 98
Numéro 071104
Pages 1-1