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Si-Interdiffusion in heavily doped AIN-GaN-based quantum well intersubband photodetectors

Daniel Hofstetter, Joab Di Francesco, Denis Martin, Nicolas Grandjean, Yulia Kotsar & Eva Monroy

Résumé We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000 °C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude
of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions.
© 2011 American Institute of Physics.
   
Mots-clés
   
Citation Hofstetter, D., Di Francesco, J., Martin, D., Grandjean, N., Kotsar, Y., & Monroy, E. (2011). Si-Interdiffusion in heavily doped AIN-GaN-based quantum well intersubband photodetectors. Applied Physics Letters, 98(241101), 1-1.
   
Type Article de périodique (Anglais)
Date de publication 2011
Nom du périodique Applied Physics Letters
Volume 98
Numéro 241101
Pages 1-1